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STW16NA60
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PRELIMINARY DATA TYPE STW16NA60
s s
V DSS 600 V
R DS(on) < 0.4
ID 16 A
s s s s s
TYPICAL RDS(on) = 0.33 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD TO-247
3 2 1
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s CONSUMER AND INDUSTRIAL LIGHTING s DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY (UPS)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS VDGR V GS ID ID I DM (*) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature
o o
Value 600 600 30 16 10 64 250 2 -65 to 150 150
Unit V V V A A A W W/ o C
o o
C C 1/5
(*) Pulse width limited by safe operating area
January 1998
This is preliminary information on a new product now in development or undergoing evaluation.Details are subject to change without notice.
STW16NA60
THERMAL DATA
R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.5 30 0.1 300
o o
C/W C/W o C/W o C
AVALANCHE CHARACTERISTICS
Symbol I AR E AS EAR I AR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 25 V) Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%) Max Value 16 1000 80 10 Unit A mJ mJ A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VGS = 0 Min. 600 25 250 100 Typ. Max. Unit V A A nA
Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = 30 V
T c = 100 o C
ON ()
Symbol V GS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance V DS = VGS V GS = 10 V V GS = 10 V Test Conditions ID = 250 A ID = 8 A ID = 8 A Min. 2.25 Typ. 3 0.33 16 Max. 3.75 0.4 0.8 Unit V A
T c = 100 o C
On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V
DYNAMIC
Symbol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz ID = 8 A V GS = 0 Min. 10 Typ. 15 3700 450 140 Max. Unit S pF pF pF
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STW16NA60
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol t d(on) tr (di/dt)on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions V DD = 300 V ID = 8 A R G = 4.7 V GS = 10 V (see test circuit, figure 3) V DD = 480 V I D = 16 A V GS = 10 V R G = 47 (see test circuit, figure 5) V DD = 480 V I D = 16 A V GS = 10 V Min. Typ. 25 21 240 Max. 30 25 Unit ns ns A/s
Qg Q gs Q gd
Total Gate Charge Gate-Source Charge Gate-Drain Charge
155 18 78
200
nC nC nC
SWITCHING OFF
Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 480 V I D = 16 A V GS = 10 V R G = 4.7 (see test circuit, figure 5) Min. Typ. 45 20 66 Max. 50 25 80 Unit ns ns ns
SOURCE DRAIN DIODE
Symbol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 16 A VGS = 0 I SD = 16 A di/dt = 100 A/s V DD = 100 V T j = 150 o C (see test circuit, figure 5) Test Conditions Min. Typ. Max. 16 64 1.6 770 17 45 Unit A A V ns C A
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area
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STW16NA60
TO-247 MECHANICAL DATA
mm MIN. A D E F F3 F4 G H L L3 L4 L5 M Dia 2 3.55 15.3 19.7 14.2 34.6 5.5 3 3.65 0.079 0.140 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134
DIM.
P025P
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STW16NA60
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ...
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